SI1305DL-T1-E3 Vishay, SI1305DL-T1-E3 Datasheet

MOSFET P-CH 8V 860MA SOT323-3

SI1305DL-T1-E3

Manufacturer Part Number
SI1305DL-T1-E3
Description
MOSFET P-CH 8V 860MA SOT323-3
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI1305DL-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
280 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
8V
Current - Continuous Drain (id) @ 25° C
860mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
4nC @ 4.5V
Power - Max
290mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Transistor Polarity
P Channel
Continuous Drain Current Id
-920mA
Drain Source Voltage Vds
-8V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-450mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1305DL-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1305DL-T1-E3
Manufacturer:
VISHAY
Quantity:
42 000
Part Number:
SI1305DL-T1-E3
Manufacturer:
FAIRCHILD
Quantity:
127
Part Number:
SI1305DL-T1-E3
Manufacturer:
VISHAY
Quantity:
180
Part Number:
SI1305DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71076
S10-0110-Rev. F, 18-Jan-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 8
(V)
0.280 at V
0.380 at V
0.530 at V
R
DS(on)
Ordering Information: Si1305DL-T1-E3 (Lead (Pb)-free)
J
a
GS
GS
GS
= 150 °C)
a
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
P-Channel 1.8-V (G-S) MOSFET
G
S
a
1
2
SC-70 (3-LEADS)
a
SOT-323
Si1305DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
A
I
- 0.92
- 0.79
- 0.67
= 25 °C, unless otherwise noted
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
3
D
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
DM
thJA
I
I
thJF
DS
GS
D
S
D
stg
Marking Code
LB
X
®
Part # Code
Power MOSFET: 1.8 V
Typical
- 0.92
- 0.74
- 0,28
0.34
0.22
315
360
285
5 s
Lot Traceability
and Date Code
- 55 to 150
± 8
- 8
- 3
Steady State
Maximum
- 0.86
- 0.69
- 0.24
0.29
0.19
375
430
340
Vishay Siliconix
Si1305DL
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1305DL-T1-E3 Summary of contents

Page 1

... DS DS(on) 0.280 4 0.380 2 0.530 1 Ordering Information: Si1305DL-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si1305DL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... T 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71076 S10-0110-Rev. F, 18-Jan °C J 0.8 1.0 1.2 Si1305DL Vishay Siliconix 350 300 C iss 250 200 C 150 oss C 100 rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.2 ...

Page 4

... Si1305DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 250 µA D 0.2 0.1 0.0 - 0 Temperature (° Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... 0. Document Number: 71153 06-Jul-01 Package Information Vishay Siliconix Dim Min Nom Max A 0.90 – 1.10 A – – 0. 0.80 – 1. 0.25 – 0.40 c 0.10 – 0.25 D 1.80 2.00 2.20 E 1.80 2.10 2. 1.15 1.25 1. 0.65BSC e 1.20 1.30 1. 0.10 0.20 0.30 7_Nom ECN: S-03946—Rev. C, 09-Jul-01 ...

Page 6

... This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for single-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 350 mA) need to be switched, either directly or by using a level shift configuration ...

Page 7

... AN813 Vishay Siliconix THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 3-pin SC-70 measured as junction-to-foot thermal resistance is 285_C/W typical, 340_C/W maximum. Junction-to-foot thermal resistance for the 6-pin SC70-6 is 105_C/W typical, 130_C/W maximum — a nearly two-thirds reduction compared with the 3-pin device. ...

Page 8

... RECOMMENDED MINIMUM PADS FOR SC-70: 3-Lead Return to Index Return to Index Document Number: 72601 Revision: 21-Jan-08 Application Note 826 0.025 0.022 (0.622) (0.559) 0.027 (0.686) 0.071 (1.803) Recommended Minimum Pads Dimensions in Inches/(mm) Vishay Siliconix www.vishay.com 17 ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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