SI2303CDS-T1-GE3 Vishay, SI2303CDS-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI2303CDS-T1-GE3
• Description: MOSFET P-CH 30V 2.7A SOT23-3
• Manufacturer: Vishay

Specifications of SI2303CDS-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 155pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 330mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2303CDS-T1-GE3TR

Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69991.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
0.05
0.02
-4
0.2
0.1
Duty Cycle = 0.5
0.1
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
t
1
A
= P
S-83053-Rev. B, 29-Dec-08
t
2
Document Number: 69991
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 104 °C/W
1000
1