SI2303CDS-T1-GE3 Vishay, SI2303CDS-T1-GE3 Datasheet - Page 3
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SI2303CDS-T1-GE3
Manufacturer Part Number
SI2303CDS-T1-GE3
Description
MOSFET P-CH 30V 2.7A SOT23-3
Manufacturer
Vishay
Datasheet
1.SI2303CDS-T1-GE3.pdf
(7 pages)
Specifications of SI2303CDS-T1-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 1.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
155pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.7A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
330mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2303CDS-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
31 407
Company:
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
ADI
Quantity:
10
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI2303CDS-T1-GE3/N3
Manufacturer:
STANSON
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69991
S-83053-Rev. B, 29-Dec-08
0.5
0.4
0.3
0.2
0.1
10
10
0
8
6
4
2
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
I
D
= 1.9 A
V
GS
2
1
V
= 4.5 V
DS
Output Characteristics
1
Q
- Drain-to-Source Voltage (V)
g
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
4
2
V
DS
2
V
GS
= 15 V
6
3
= 10 V
V
GS
V
V
= 10 thru 5 V
DS
V
GS
3
GS
8
= 24 V
4
= 4 V
= 3 V
10
5
4
300
240
180
120
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
60
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
6
V
V
DS
T
GS
1
Transfer Characteristics
0
J
- Drain-to-Source Voltage (V)
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
V
T
oss
GS
C
25
= 25 °C
Capacitance
12
= 10 V, I
T
C
= 125 °C
C
50
2
Vishay Siliconix
iss
D
V
= 1.9 A
Si2303CDS
18
GS
75
= 4.5 V, I
www.vishay.com
100
T
3
C
24
= - 55 °C
D
= 1.4 A
125
150
30
4
3