SI2302CDS-T1-GE3 Vishay, SI2302CDS-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI2302CDS-T1-GE3
• Description: MOSFET N-CH 20V 2.6A SOT23-3
• Manufacturer: Vishay

Specifications of SI2302CDS-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 850mV @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4.5V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.057 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 710 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.9A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 850mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2302CDS-T1-GE3TR

Si2302CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68645.
www.vishay.com
4
0.12
0.10
0.08
0.06
0.04
10
8
6
4
2
0
0.01
0
0.01
0.1
On-Resistance vs. Gate-to-Source Voltage
1
10
-4
0.02
0.2
0.05
Duty Cycle = 0.5
0.1
0.1
1
V
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
T
Single Pulse
J
1
10
= 25 °C
2
Time (s)
-3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
3
T
T
A
10
J
100
= 25 °C
= 125 °C
-2
4
1000
Square Wave Pulse Duration (s)
5
10
-1
Limited by R
- 0.2
- 0.3
1
- 0.1
0.01
0.0
0.1
0.2
0.1
10
1
- 50
0.1
Safe Operating Area, Junction-to-Ambient
Single Pulse
* V
DS(on)*
T
- 25
A
GS
= 25 °C
> minimum V
V
DS
10
0
- Drain-to-Source Voltage (V)
Threshold Voltage
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
T
1
P
J
DM
25
- Temperature (°C)
JM
BVDSS Limited
GS
- T
t
A
1
at which R
50
= P
S-81007-Rev. A, 05-May-08
t
2
Document Number: 68645
DM
100
Z
I
thJA
75
D
thJA
10
t
t
= 250 µA
1
2
DS(on)
(t)
= 70 °C/W
100
is specified
100 ms
100 µs
1 ms
10 ms
1 s
10 s
100 s, DC
I
D
125
= 1 mA
1000
100
150