SI2302CDS-T1-GE3 Vishay, SI2302CDS-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI2302CDS-T1-GE3
• Description: MOSFET N-CH 20V 2.6A SOT23-3
• Manufacturer: Vishay

Specifications of SI2302CDS-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 850mV @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4.5V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.057 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 710 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.9A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 850mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2302CDS-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68645
S-81007-Rev. A, 05-May-08
400
320
240
160
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0.0
80
- 50
0
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
C
C
iss
T
oss
C
0.3
V
= 125 °C
V
DS
Transfer Characteristics
T
GS
5
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
T
C
25
Capacitance
= 25 °C
0.6
V
GS
50
10
= 2.5 V, I
V
0.9
GS
75
D
= 4.5 V, I
= 3.1 A
100
T
15
C
1.2
= - 55 °C
D
125
= 3.6 A
150
1.5
20
0.070
0.060
0.050
0.040
0.030
0.001
0.01
100
0.1
10
5
4
3
2
1
0
1
0.0
0
0
I
D
= 3.6 A
Source-Drain Diode Forward Voltage
0.2
On-Resistance vs. Drain Current
2
V
SD
1
T
Q
J
V
- Source-to-Drain Voltage (V)
g
= 150 °C
V
V
0.4
DS
I
- Total Gate Charge (nC)
D
GS
GS
- Drain Current (A)
= 15 V
Gate Charge
= 2.5 V
= 4.5 V
4
V
0.6
DS
2
Vishay Siliconix
= 10 V
T
J
T
Si2302CDS
= - 55 °C
6
J
= 25 °C
0.8
V
DS
www.vishay.com
= 5 V
3
8
1.0
1.2
10
4
3