SI1302DL-T1-E3 Vishay, SI1302DL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1302DL-T1-E3
• Description: MOSFET N-CH 30V 600MA SOT323-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1302DL-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 480 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 10V
• Power - Max: 280mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.75 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.6 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 640mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 700mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1302DL-T1-E3TR

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 71249
S10-2140-Rev. F, 20-Sep-10
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
8
6
4
2
0
1
0.0
0.0
0.0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 0.6 A
0.2
= 15 V
0.2
0.2
On-Resistance vs. Drain Current
V
SD
Q
g
T
- Source-to-Drain Voltage (V)
J
- Total Gate Charge (nC)
0.4
I
= 150 °C
D
Gate Charge
- Drain Current (A)
0.4
0.4
0.6
0.6
0.6
0.8
V
V
GS
GS
= 4.5 V
= 10 V
T
0.8
0.8
J
1.0
= 25 °C
1.0
1.0
1.2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.8
1.5
1.2
0.9
0.6
0.3
0.0
60
50
40
30
20
10
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 0.6 A
C
= 10 V
4
2
rss
V
V
DS
T
0
GS
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
Capacitance
25
C
oss
8
4
C
iss
I
D
50
Vishay Siliconix
= 0.6 A
12
6
75
Si1302DL
www.vishay.com
100
16
8
125
150
20
10
3