SI1031R-T1-E3 Vishay, SI1031R-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1031R-T1-E3
• Description: MOSFET P-CH 20V 140MA SC-75A
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1031R-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 140mA
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -150mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 15ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1031R-T1-E3TR

Si1031R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71171.
www.vishay.com
4
- 0.2
- 0.3
- 0.1
0.3
0.2
0.0
0.1
- 50
0.01
0.1
Threshold Voltage Variance vs. Temperature
2
1
10
- 25
- 4
Duty Cycle = 0.5
0.05
0.02
0.2
0.1
0
T
J
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1031R Only)
- Temperature (° C)
10
Single Pulse
25
-3
I
D
50
= 0.25 mA
-1
-2
-3
-4
-5
-6
-7
0
-50
A
75
= 25 °C, unless otherwise noted)
10
-25
-2
100
BV
0
125
GSS
T
J
Square Wave Pulse Duration (s)
- Temperature (°C)
vs. Temperature
25
10
-1
50
75
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
1
-50
125
-25
V
GS
= 2.8 V
I
1
0
GSS
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
T
0
P
J
DM
- Temperature (° C)
JM
vs. Temperature
- T
25
t
1
A
S10-2544-Rev. D, 08-Nov-10
= P
t
2
Document Number: 71171
DM
50
Z
thJA
thJA
100
t
t
1
2
(t)
= 500 °C/W
75
100
6
0
0
125