BSS84W-7-F Diodes Inc, BSS84W-7-F Datasheet - Page 2

• Manufacturer Part Number: BSS84W-7-F
• Description: MOSFET P-CH 50V 130MA SC70-3
• Manufacturer: Diodes Inc

Specifications of BSS84W-7-F

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 130mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 45pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 0.05 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.13 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: -130mA
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 10ohm
• Rds(on) Test Voltage Vgs: -5V
• Threshold Voltage Vgs Typ: -1.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSS84W-FDITR

BSS84W
Document number: DS30205 Rev. 11 - 2
250
200
150
100
-1.0
-0.4
-0.0
-0.8
-0.6
-0.2
15
12
50
3
9
6
0
0
-50
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
0
Fig. 5 On-Resistance vs. Junction Temperature
-25
25
Fig. 3 Drain-Current vs. Gate-Source Voltage
-1
V
I = -0.13A
T , JUNCTION TEMPERATURE (°C)
D
GS
T , AMBIENT TEMPERATURE (°C)
J
V
A
= -10V
GS
50
0
-2
, GATE-SOURCE VOLTAGE (V)
75
25
-3
100
50
-4
125
75
-5
100
150 175
-6
125
-7
150
200
-8
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-600
-500
-400
-300
-200
-100
20.0
25.0
15.0
10.0
5.0
0.0
10
-0.0
0
9
8
6
5
2
7
4
3
1
0
Fig. 2 Drain-Source Current vs.Drain-Source Voltage
0
0
Fig. 4 On-Resistance vs. Gate-Source Voltage
V
T = 25 C
GS
A
Fig. 6 On-Resistance vs. Drain-Current
= -3V
V , DRAIN-SOURCE VOLTAGE (V)
-0.2
-1
DS
-1
°
I , DRAIN-CURRENT (A)
V
D
GS
V
GS
, GATE-SOURCE (V)
-0.4
-2
= -4V
-2
V
T
GS
A
V
= -3.5V
= 25 C
GS
-0.6
-3
= -4.5V
-3
°
V
T = 125 C
GS
A
-0.8
-4
V
= -8V
V
-4
GS
GS
V
GS
= -5V
= -6V
© Diodes Incorporated
°
BSS84W
= -10V
October 2007
1.0
-5
-5