BSS84W-7-F Diodes Inc, BSS84W-7-F Datasheet

MOSFET P-CH 50V 130MA SC70-3

BSS84W-7-F

Manufacturer Part Number
BSS84W-7-F
Description
MOSFET P-CH 50V 130MA SC70-3
Manufacturer
Diodes Inc
Datasheet

Specifications of BSS84W-7-F

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 Ohm @ 100mA, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
130mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
45pF @ 25V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
10 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
0.05 S
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.13 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
-130mA
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
10ohm
Rds(on) Test Voltage Vgs
-5V
Threshold Voltage Vgs Typ
-1.6V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BSS84W-FDITR

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Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Features
Notes:
BSS84W
Document number: DS30205 Rev. 11 - 2
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
1.
2.
3.
4.
5.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Continuous
Continuous
TOP VIEW
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
www.diodes.com
SOT-323
Symbol
R
BV
V
t
t
DS (ON)
D(OFF)
I
I
C
D(ON)
C
1 of 3
GS(th)
g
C
DSS
GSS
oss
FS
rss
DSS
iss
Mechanical Data
Symbol
Symbol
T
V
j
V
V
R
, T
P
DGR
GSS
DSS
I
Min
-0.8
θ JA
D
-50
.05
d
STG
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Gate
Equivalent Circuit
Typ
-1.6
-75
10
18
6
Drain
Max
-100
±10
-2.0
-15
-60
Source
10
45
25
12
Unit
µA
µA
nA
nA
pF
pF
pF
ns
ns
V
V
Ω
S
-55 to +150
Value
Value
-130
±20
200
625
-50
-50
V
V
V
V
V
V
V
V
V
V
R
GS
DS
DS
DS
GS
DS
GS
DS
DS
DD
GEN
G
= -50V, V
= -50V, V
= -25V, V
= -25V, I
= V
= -25V, V
= -30V, I
= 0V, I
= ±20V, V
= -5V, I
TOP VIEW
= 50Ω, V
GS
D
, I
D
D
Test Condition
D
D
= -250μA
D
GS
GS
GS
= -0.100A
GS
= -1mA
S
DS
= -0.1A
= -0.27A,
GS
= 0V, T
= 0V, T
= 0V, T
= 0V, f = 1.0MHz
= 0V
= -10V
© Diodes Incorporated
J
J
J
BSS84W
Units
Units
°C/W
mW
= 25°C
= 125°C
= 25°C
mA
°C
V
V
V
October 2007

Related parts for BSS84W-7-F

BSS84W-7-F Summary of contents

Page 1

... R DS (ON) ⎯ . ⎯ ⎯ C iss ⎯ ⎯ C oss ⎯ ⎯ C rss ⎯ D(ON) ⎯ D(OFF www.diodes.com BSS84W Drain Source TOP VIEW Value Units -50 -50 ±20 -130 Value Units 200 °C/W 625 -55 to +150 Max Unit Test Condition ⎯ 0V -250μ µA ...

Page 2

... Document number: DS30205 Rev -600 -500 -400 -300 -200 -100 0 150 175 200 0 Fig. 2 Drain-Source Current vs.Drain-Source Voltage Fig. 4 On-Resistance vs. Gate-Source Voltage 25.0 20 15.0 10.0 5.0 0.0 100 125 150 -0 www.diodes.com BSS84W ° DRAIN-SOURCE VOLTAGE (V) DS ° 125 C A ° GATE-SOURCE ( -3. - - ...

Page 3

... Ordering Information (Notes 4 and 6) Part Number BSS84W-7-F Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 1999 2000 Code Month Jan Feb Code 1 2 Package Outline Dimensions TOP VIEW Suggested Pad Layout Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...

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