NTMD4840NR2G ON Semiconductor, NTMD4840NR2G Datasheet - Page 2

• Manufacturer Part Number: NTMD4840NR2G
• Description: MOSFET N-CH DUAL 30V 7.5A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD4840NR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 565pF @ 15V
• Power - Max: 680mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 1950 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Update Notification #16146
SAMPLES: Contact your local ON Semiconductor Sales Office or Rick Ried <[e-mail] >
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact your local ON Semiconductor Sales Office or Tom Huettl <[e-mail]>
NOTIFICATION TYPE: Update Notification to PCN #16142
ON Semiconductor will consider this change approved unless specific conditions of acceptance are
provided in writing within 30 days of receipt of this notice. To do so, contact your local ON
Semiconductor Sales Office.
DESCRIPTION AND PURPOSE:
An addendum to Final Product/Process Change Notification #16142:
In connection to ON Semiconductor’s Initial Product Change Notification number 16091:
ON Semiconductor is notifying customers of its use of Copper Wire (in place of Gold Wire) on
their MOSFET Products in the SO8 Package. Products assembled with both High Cell
Density and Trench2 MOSFET Die will be affected. (Note: Original Product Change Notice
only had High Cell Density MOSFET Die listed.)
The mold compound, die attach, and lead frame materials used for the SO8 Package will not
be changed. Reliability Qualification and full electrical characterization over temperature have
been performed showing no difference between the product builds.
Issue Date: 29-Aug-2008
Rev.07-02-06
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