NTMD4840NR2G ON Semiconductor, NTMD4840NR2G Datasheet

NTMD4840NR2G

Manufacturer Part Number

NTMD4840NR2G

Description

MOSFET N-CH DUAL 30V 7.5A 8-SOIC

Manufacturer

ON Semiconductor

Datasheet

1.NTMD4840NR2G.pdf (5 pages)

Specifications of NTMD4840NR2G

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

24 mOhm @ 6.9A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.5A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

5.2nC @ 4.5V

Input Capacitance (ciss) @ Vds

565pF @ 15V

Power - Max

680mW

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Dual Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.024 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

15 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

5.5 A

Power Dissipation

1950 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMD4840NR2G

Manufacturer:

Quantity:

10 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTMD4840NR2G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

NTMD4840NR2G

Quantity:

Company:

H&T Electronics

Part Number:

NTMD4840NR2G

Quantity:

4 500

Current page: 1 of 5
Download datasheet (136Kb)

NTMD4840N

Power MOSFET

30 V, 7.5 A, Dual N−Channel, SOIC−8

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

September, 2009 − Rev. 1

MAXIMUM RATINGS

THERMAL RESISTANCE RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

Power Dissipation

Continuous Drain

Current R

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy T

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t≤10 s (Note 1)

Junction−to−FOOT (Drain)

Junction−to−Ambient – Steady State (Note 2)

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

Dual SOIC−8 Surface Mount Package Saves Board Space

This is a Pb−Free Device

Disk Drives

DC−DC Converters

Printers

qJA

= 7.5 A

(Note 1)

(Note 2)

t < 10 s (Note 1)

DS(on)

qJA

= 25°C, V

, L = 1.0 mH, R

(Note 1)

(Note 2)

t < 10 s

to Minimize Conduction Losses

Rating

= 30 V, V

Steady

State

= 25 W

= 25°C unless otherwise stated)

= 10 ms

= 25°C,

= 10 V,

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

Symbol

EAS

, T

DSS

qJA

qJF

qJA

STG

−55 to

Value

183.5

+150

1.14

0.68

1.95

Max

±20

260

110

5.5

4.4

4.5

3.5

7.5

6.0

2.0

°C/W

Unit

°C

†For information on tape and reel specifications,

NTMD4840NR2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(BR)DSS

30 V

Device

ORDERING INFORMATION

4840N = Device Code

http://onsemi.com

CASE 751

STYLE 11

36 mW @ 4.5 V

24 mW @ 10 V

SOIC−8

= Assembly Location

= Year

= Work Week

= Pb−Free Package

N−Channel

(Pb−Free)

DS(on)

Package

SOIC−8

Publication Order Number:

MARKING DIAGRAM

& PIN ASSIGNMENT

Max

2500/Tape & Reel

D1 D1 D2 D2

S1 G1 S2 G2

NTMD4840N/D

AYWW

4840N

Shipping

7.5 A

Max

†

Related parts for NTMD4840NR2G

NTMD4840NR2G Summary of contents

Page 1

... STG +150 I 2 EAS 260 °C L Device Symbol Max Unit NTMD4840NR2G R 110 qJA R 64 qJA °C/W †For information on tape and reel specifications qJF including part orientation and tape sizes, please R 183.5 refer to our Tape and Reel Packaging Specification qJA Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Tem- perature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coeffi- cient Drain−to−Source On Resistance Forward Transconductance CHARGES, ...

Page 3

1.0 2.0 3 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.060 0.055 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 ...

Page 4

C iss 500 400 300 200 C oss 100 C rss DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 ...

Page 5

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

Related keywords

ntmd4840n
NTMD4840NR2G datasheet
NTMD4840NR2G data sheet
NTMD4840NR2G pdf datasheet
NTMD4840NR2G component
NTMD4840NR2G part
NTMD4840NR2G distributor
NTMD4840NR2G RoHS
NTMD4840NR2G datasheet download