NTMD4840NR2G ON Semiconductor, NTMD4840NR2G Datasheet - Page 2

• Manufacturer Part Number: NTMD4840NR2G
• Description: MOSFET N-CH DUAL 30V 7.5A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD4840NR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 565pF @ 15V
• Power - Max: 680mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 1950 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−TO−SOURCE CHARACTERISTICS
PACKAGE PARASITIC VALUES
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Tem-
perature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coeffi-
cient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
Characteristic
(T
J
= 25°C unless otherwise noted)jk
V
V
V
(BR)DSS
Symbol
Q
Q
V
GS(TH)
R
Q
t
(BR)DSS
C
C
t
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
G(TOT)
d(ON)
Q
DS(on)
V
g
G(TH)
DSS
GSS
t
R
L
T
L
L
OSS
RSS
RR
T
ISS
FS
GD
t
t
SD
GS
RR
r
S
D
G
f
a
b
G
/T
/T
J
J
http://onsemi.com
V
V
V
GS
GS
GS
V
V
V
V
V
V
I
GS
GS
= 0 V, f = 1.0 MHz, V
= 4.5 V, V
DS
GS
D
GS
= 10 V, V
V
GS
V
V
V
V
I
GS
= 2.0 A
D
2
DS
GS
GS
= 4.5 V
DS
= 0 V, d
= 24 V
= 10 V
= 0 V,
= 0 V
= 1.0 A, R
Test Condition
= 10 V, V
= 0 V, V
= V
= 1.5 V, I
= 0 V, I
T
I
S
A
DS
DS
DS
= 2.0 A
IS
= 25°C
, I
/d
= 15 V, I
= 15 V, I
D
GS
D
DD
G
t
= 250 mA
D
= 250 mA
= 100 A/ms,
= 3.0 W
= ±20 V
= 6.9 A
= 15 V,
T
T
T
T
I
I
J
D
D
J
J
J
DS
= 100°C
D
= 125°C
= 6.9 A
= 5.0 A
D
= 25°C
= 25°C
= 6.9 A
= 6.9 A
= 15 V
Min
1.5
30
0.76
0.58
12.5
0.66
0.20
1.50
Typ
520
140
6.0
4.8
1.1
2.1
1.9
9.5
7.6
5.0
3.0
7.3
5.2
6.0
2.0
18
16
26
15
70
17
±100
Max
1.0
3.0
1.0
3.0
10
24
36
mV/°C
mV/°C
Unit
mW
nA
nC
nC
nC
nH
nH
nH
mA
pF
ns
ns
W
V
V
S
V