NTHD3100CT3 ON Semiconductor, NTHD3100CT3 Datasheet - Page 6

• Manufacturer Part Number: NTHD3100CT3
• Description: MOSFET N/P-CH COMPL 20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3100CT3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 3.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 165pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.175
0.125
0.075
0.15
0.05
8
7
6
5
4
3
2
1
0
9
0.2
0.1
1.4
1.3
0.9
0.8
0.7
0
1.2
1.1
Figure 13. On−Resistance vs. Gate−to−Source
1
1
−50
−V
1
I
V
Figure 11. On−Region Characteristics
D
−V
DS
GS
−25
= −3.2 A
Figure 15. On−Resistance Variation with
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−2.6 V
= −4.5 V
2
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
−T
V
V
GS
GS
J
3
, JUNCTION TEMPERATURE (°C)
0
= −3 V
= −5 V to −3.6 V
4
Voltage
25
3
Temperature
5
TYPICAL P−CHANNEL PERFORMANCE CURVES
50
6
4
−2.4 V
−2.2 V
−1.8 V
−1.6 V
−1.4 V
−2 V
75
7
(T
I
T
100
D
8
J
T
J
= −3.2 A
= 25°C
J
5
= 25°C unless otherwise noted)
= 25°C
http://onsemi.com
9
125
10
150
6
6
0.175
0.125
0.075
1000
0.15
0.05
100
0.2
0.1
10
9
8
7
6
5
4
3
2
1
0
2
0
2
Figure 14. On−Resistance vs. Drain Current
V
V
T
Figure 16. Drain−to−Source Leakage Current
GS
DS
J
−V
−V
= 25°C
4
= 0 V
≥ −10 V
0.5
DS
GS
Figure 12. Transfer Characteristics
3
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
6
D,
25°C
DRAIN CURRENT (AMPS)
1
T
and Gate Voltage
C
4
8
= −55°C
V
T
vs. Voltage
V
1.5
GS
10
J
GS
= 100°C
= −2.5 V
= −4.5 V
5
100°C
12
2
14
6
2.5
16
7
3
18
3.5
20
8