NTHD3100CT3 ON Semiconductor, NTHD3100CT3 Datasheet - Page 5

• Manufacturer Part Number: NTHD3100CT3
• Description: MOSFET N/P-CH COMPL 20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3100CT3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 3.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 165pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
400
300
200
100
10
1
0
1
10
V
I
V
Figure 9. Resistive Switching Time Variation
C
C
D
DS
GS
ISS
RSS
= 2.9 A
t
t
d(on)
d(off)
= 10 V
= 4.5 V
V
t
t
f
r
5
DS
Figure 7. Capacitance Variation
R
= 0 V
G
, GATE RESISTANCE (OHMS)
V
GS
vs. Gate Resistance
0
V
V
DS
GS
= 0 V
10
TYPICAL N−CHANNEL PERFORMANCE CURVES
5
10
(T
J
T
= 25°C unless otherwise noted)
J
15
= 25°C
C
http://onsemi.com
OSS
100
20
5
5
4
3
2
1
0
0
5
4
3
Q
2
1
0
0.3
GS
Drain−to−Source Voltage vs. Total Charge
Figure 10. Diode Forward Voltage vs. Current
V
V
T
DS
J
GS
V
0.5
= 25°C
SD
0.4
Figure 8. Gate−to−Source and
= 0 V
Q
Q
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
g
GD
, TOTAL GATE CHARGE (nC)
1
0.5
Q
G
0.6
1.5
0.7
V
2
GS
0.8
I
T
D
J
= 2.9 A
= 25°C
2.5
0.9
3
15
12
9
6
3
0
1.0