NTHC5513T1 ON Semiconductor, NTHC5513T1 Datasheet - Page 5

• Manufacturer Part Number: NTHC5513T1
• Description: MOSFET N/P-CH 20V 2.1A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHC5513T1

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTHC5513T1OS

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
400
300
200
100
10
1
0
1
10
V
I
V
Figure 9. Resistive Switching Time Variation
C
C
D
DD
GS
ISS
RSS
t
t
= 2.7 A
d(ON)
d(OFF
= 16 V
= 4.5 V
)
V
t
t
f
r
5
DS
Figure 7. Capacitance Variation
R
= 0 V
G
, GATE RESISTANCE (OHMS)
V
GS
vs. Gate Resistance
0
V
V
DS
GS
= 0 V
10
TYPICAL N−CHANNEL PERFORMANCE CURVES
5
10
(T
J
T
= 25 C unless otherwise noted)
J
15
= 25 C
C
http://onsemi.com
OSS
NTHC5513
100
20
5
4.5
3.5
2.5
1.5
0.5
5
4
3
2
1
0
0
7
6
5
4
3
2
1
0
0.3
Drain−to−Source Voltage vs. Total Charge
Q
Figure 10. Diode Forward Voltage vs. Current
GS
V
T
GS
J
V
0.5
= 25 C
SD
Figure 8. Gate−to−Source and
= 0 V
0.45
Q
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
, TOTAL GATE CHARGE (nC)
Q
1
GD
0.6
Q
G
1.5
0.75
2
0.9
I
T
D
J
2.5
= 2.7 A
= 25 C
1.05
3
20
16
12
8
4
0
1.2