NTHC5513T1 ON Semiconductor, NTHC5513T1 Datasheet - Page 4

• Manufacturer Part Number: NTHC5513T1
• Description: MOSFET N/P-CH 20V 2.1A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHC5513T1

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTHC5513T1OS

0.15
0.05
0.1
8
6
4
2
0
0
1.7
1.5
1.3
1.1
0.9
0.7
0
0
Figure 3. On−Resistance vs. Gate−to−Source
−50
V
I
V
1
D
V
DS
GS
Figure 1. On−Region Characteristics
= 2.7 A
GS
2.2 V
−25
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
= 4.5 V
1
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
V
V
GS
GS
T
J
= 5 V to 3 V
, JUNCTION TEMPERATURE ( C)
= 2.4 V
3
0
2
4
Voltage
25
Temperature
5
3
TYPICAL N−CHANNEL PERFORMANCE CURVES
50
6
1.8 V
1.6 V
1.4 V
2 V
75
4
7
(T
T
I
T
100
D
8
J
J
J
= 2.7 A
= 25 C
= 25 C
= 25 C unless otherwise noted)
5
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9
125
NTHC5513
10
6
150
4
0.07
0.04
100
0.1
10
1
8
6
4
2
0
2
Figure 4. On−Resistance vs. Drain Current and
1
0
V
GS
Figure 6. Drain−to−Source Leakage Current
V
T
4
V
J
V
DS
= 0 V
DS
GS
= 25 C
0.5
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10 V
I
6
D,
DRAIN CURRENT (AMPS)
25 C
3
1
8
T
Gate Voltage
C
V
V
= −55 C
GS
vs. Voltage
T
GS
10
J
= 100 C
= 4.5 V
= 2.5 V
1.5
12
100 C
5
14
2
16
2.5
7
18
20
3