NTMD2P01R2 ON Semiconductor, NTMD2P01R2 Datasheet - Page 3

• Manufacturer Part Number: NTMD2P01R2
• Description: MOSFET PWR P-CHAN DUAL 16V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD2P01R2

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 16V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 750pF @ 16V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTMD2P01R2OS

0.15
0.05
0.2
0.1
1.6
1.4
1.2
0.8
0.6
0
3
2
1
0
4
2
1
−50
0
Figure 3. On−Resistance vs. Gate−to−Source
T
V
−V
−V
J
I
GS
−25
D
Figure 5. On−Resistance Variation with
= 25°C
Figure 1. On−Region Characteristics.
GS,
DS
= −2.4 A
V
V
V
= −4.5 V
GS
GS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GATE−TO−SOURCE VOLTAGE (VOLTS)
2
T
J,
= −10 V
= −4.5 V
= −2.5 V
V
JUNCTION TEMPERATURE (°C)
0
GS
4
= −2.1 V
25
Temperature.
4
Voltage.
50
V
V
V
GS
GS
GS
= −1.9 V
= −1.7 V
= −1.5 V
6
75
6
100
T
J
8
= 25°C
http://onsemi.com
125
8
150
10
3
1000
0.01
0.12
0.08
0.06
0.04
100
0.1
0.1
10
5
4
3
2
1
0
1
1
0
1
T
T
Figure 4. On−Resistance vs. Drain Current and
V
V
J
Figure 6. Drain−to−Source Leakage Current
J
T
GS
DS
= 100°C
−V
= 25°C
−V
J
= 25°C
= 0 V
> = −10 V
1.5
GS
DS,
Figure 2. Transfer Characteristics.
, GATE−TO−SOURCE VOLTAGE (VOLTS)
4
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.5
−I
D,
2
DRAIN CURRENT (AMPS)
T
T
T
T
J
J
J
J
= 125°C
= 100°C
= 55°C
Gate Voltage.
= 25°C
vs. Voltage.
V
V
8
2.5
GS
GS
= −2.7 V
= −4.5 V
2
3
12
3.5
2.5
16
4
20
4.5
3