NTMD2P01R2 ON Semiconductor, NTMD2P01R2 Datasheet - Page 2

• Manufacturer Part Number: NTMD2P01R2
• Description: MOSFET PWR P-CHAN DUAL 16V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD2P01R2

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 16V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 750pF @ 16V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTMD2P01R2OS

5. Handling precautions to protect against electrostatic discharge is mandatory.
6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 6 and 7)
BODY−DRAIN DIODE RATINGS (Note 6)
Drain−to−Source Breakdown Voltage
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate−Body Leakage Current
Gate Threshold Voltage
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Diode Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
GS
GS
DS
GS
GS
GS
DS
= 0 Vdc, I
= −16 Vdc, V
= −16 Vdc, V
= −10 Vdc, V
= +10 Vdc, V
= V
= −4.5 Vdc, I
= −2.7 Vdc, I
= −2.5 Vdc, I
= −10 Vdc, I
GS
, I
D
D
= −250 mAdc)
= −250 mAdc)
D
D
D
D
GS
GS
DS
DS
= −1.2 Adc)
= −2.4 Adc)
= −1.2 Adc)
= −1.2 Adc)
= 0 Vdc, T
= 0 Vdc, T
= 0 Vdc)
= 0 Vdc)
Characteristic
J
J
= 25°C)
= 125°C)
(I
S
(T
= −2.4 Adc, V
(V
(V
J
(V
(I
(I
= 25°C unless otherwise noted) (Note 5)
DD
DD
S
S
DS
= −2.4 Adc, V
= −2.4 Adc, V
= −10 Vdc, I
= −10 Vdc, I
= −16 Vdc, V
dI
V
V
V
(V
I
S
GS
GS
GS
D
f = 1.0 MHz)
R
R
DS
/dt = 100 A/ms)
= −2.4 Adc)
G
G
GS
= −4.5 Vdc,
= −2.7 Vdc,
= −4.5 Vdc,
= −16 Vdc,
= 6.0 W)
= 6.0 W)
http://onsemi.com
= 0 Vdc, T
D
D
GS
GS
GS
= −2.4 Adc,
= −1.2 Adc,
= 0 Vdc)
= 0 Vdc,
= 0 Vdc,
2
J
= 125°C)
V
Symbol
R
V
(BR)DSS
t
t
t
t
I
I
I
C
Q
DS(on)
C
V
GS(th)
C
Q
Q
Q
g
d(on)
d(off)
d(on)
d(off)
DSS
GSS
GSS
t
t
t
FS
oss
t
t
t
t
SD
rss
RR
iss
rr
a
b
tot
gs
gd
r
f
r
f
−0.5
Min
−16
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−12.7
−0.90
0.070
0.100
−0.88
−0.75
0.025
0.110
Typ
540
215
100
2.5
4.2
1.5
5.0
10
35
33
29
15
40
35
35
10
37
16
21
−
−
−
−
−
0.100
0.130
0.150
−100
Max
−1.0
−1.5
−1.0
−10
100
750
325
175
20
65
60
55
18
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
nC
mC
pF
ns
ns
ns
W