FMM150-0075P IXYS, FMM150-0075P Datasheet - Page 5

• Manufacturer Part Number: FMM150-0075P
• Description: MOSFET PWR 75V ISOPLUS I4-PAC-5
• Manufacturer: IXYS

Specifications of FMM150-0075P

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 120A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 225nC @ 10V
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Vdss, Max, (v): 75
• Id25, Tc = 25°c, (a): 150
• Rds(on), Max, Tj = 25°c, (ohms): 4.2
• Ciss, Typ, (pf): 120
• Qg, Typ, (nc): -
• Tf, Typ, (ns): 90
• Tr, Typ, (ns): 100
• Rthjc, Max, (c/w): 0.6
• Package Style: ISOPLUS i4-PAC™ (5 - Lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

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V
V
I
GS
D
DS
120
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 17 Definition of switching times
80
60
40
20
50
40
30
20
10
0
0
0,1 I
400
400
0,1 V
0.2
t
d(on)
Fig. 13 Reverse recovery time t
Fig. 15 Reverse recovery charge Q
D
GS
V
T
VJ
R
0,9 I
t
= 30 V
r
= 125°C
D
of the body diode vs. di/dt
of the body diode vs. di/dt
0.4
800
800
-di
-di
V
SD
F
F
I
/dt [A/µs]
/dt [A/µs]
F
0.6
- Volts
= 50 A
150 A
T
J
= 125°C
1200
1200
I
F
= 50 A
150 A
rr
0.8
0,9 V
rr
T
J
t
d(off)
GS
= 25°C
1600
1600
0,9 I
1.0
t
f
D
0,1 I
D
t
t
300
250
200
150
100
70
60
50
40
30
20
10
50
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
0
0.001
400
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Fig. 18 Therm. impedance junction to case Z
Fig. 14 Reverse recovery current I
Fig. 16 Source current I
T
J
= -25°C
125°C
150°C
25°C
of the body diode vs. di/dt
source drain voltage V
0.01
800
-di
FMM 150-0075P
Time - Seconds
F
V
/dt [A/µs]
SD
0.1
[V]
S
vs.
I
1200
F
= 50 A
150 A
SD
1
(body diode)
RM
FMM 150-0075P
1600
5 - 5
10
thJC