FMM150-0075P IXYS, FMM150-0075P Datasheet - Page 3

• Manufacturer Part Number: FMM150-0075P
• Description: MOSFET PWR 75V ISOPLUS I4-PAC-5
• Manufacturer: IXYS

Specifications of FMM150-0075P

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 120A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 225nC @ 10V
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Vdss, Max, (v): 75
• Id25, Tc = 25°c, (a): 150
• Rds(on), Max, Tj = 25°c, (ohms): 4.2
• Ciss, Typ, (pf): 120
• Qg, Typ, (nc): -
• Tf, Typ, (ns): 90
• Tr, Typ, (ns): 100
• Rthjc, Max, (c/w): 0.6
• Package Style: ISOPLUS i4-PAC™ (5 - Lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

© 2006 IXYS All rights reserved
350
300
250
200
150
100
1.2
1.1
1.0
0.9
0.8
0.7
2.5
2.0
1.5
1.0
0.5
0.0
50
0
-25
-25
0
Fig. 1 Drain source breakdown voltage V
Fig. 3 Typical output characteristic
Fig. 5 Drain source on-state resistance R
V GS =
V
I
20 V
15 V
10 V
D
GS
= 150 A
= 10 V
0
0
1
vs. junction temperature T
vs. junction temperature T
25
25
R
DS(on)
2
7 V
50
50
normalized
T
T
J
J
V
3
[°C]
[°C]
6.5 V
DS
75
75
[V]
4
100
100
VJ
T
VJ
J
= 25°C
125
125
5
5.5 V
6 V
5 V
DS(on)
DSS
150
150
6
300
250
200
150
100
350
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
50
50
0
0
0
0
0
Fig. 2 Typical transfer characteristic
Fig. 4 Typical output characteristic
Fig. 6 Drain source on-state
V
I
D
GS
= 150 A
= 10 V
50
1
1
resistance R
V GS =
5 V
20 V
15 V
10 V
100
2
2
FMM 150-0075P
5.5 V
150
V
V
T
3
DS(on)
GS
T J = 25°C
DS
J
3
[°C]
[V]
[V]
200
versus I
4
7 V
6 V
V
4
T J = 25°C
GS
250
5
= 20 V
D
T J = 125°C
T J = 125°C
6.5 V
300
5
6
6.5 V
5.5 V
15 V
10 V
6 V
5 V
7 V
3 - 5
350
7
6