IRF9910 International Rectifier, IRF9910 Datasheet - Page 7

MOSFET 2N-CH 20V 10A 8-SOIC

IRF9910

Manufacturer Part Number
IRF9910
Description
MOSFET 2N-CH 20V 10A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF9910

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.4 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A, 12A
Vgs(th) (max) @ Id
2.55V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
900pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS non-compliant
Other names
*IRF9910

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0.001
0.01
100
R G
0.1
20V
VGS
10
Fig 26. Unclamped Inductive Test Circuit
V DS
1
1E-006
t p
Fig 28. Switching Time Test Circuit
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
I AS
D.U.T
D = 0.50
0.01 Ω
L
0.05
0.10
0.02
0.20
0.01
Duty Factor < 0.1%
Pulse Width < 1µs
V
1E-005
GS
and Waveform
15V
SINGLE PULSE
( THERMAL RESPONSE )
DRIVER
V
DS
+
- V DD
0.0001
A
I
AS
D.U.T
L
D
V
t 1 , Rectangular Pulse Duration (sec)
DD
0.001
+
t p
-
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
V
(BR)DSS
0.01
i/Ri
R
1
R
1
90%
V
10%
V
τ
DS
2
Fig 29. Switching Time Waveforms
GS
τ
R
2
2
R
2
0.1
Fig 27. Gate Charge Test Circuit
12V
t
R
d(on)
τ
V
3
3
R
τ
GS
3
3
Same Type as D.U.T.
Current Regulator
.2µF
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
τ
t
R
4
r
τ
4
R
4
4
1
50KΩ
3mA
τ
C
Current Sampling Resistors
τ
Ri (°C/W) τi (sec)
.3µF
1.688
14.468
30.264
16.106
I
G
t
d(off)
10
D.U.T.
I
0.000230
0.105807
1.001500
29.90000
D
t
f
+
-
V
DS
7
100

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