IRF9910 International Rectifier, IRF9910 Datasheet - Page 3

• Manufacturer Part Number: IRF9910
• Description: MOSFET 2N-CH 20V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9910

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A, 12A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant
• Other names: *IRF9910

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10000
10000
1000
1000
0.01
100
100
100
0.1
0.1
0.1
Fig 5. Typical Transfer Characteristics
10
10
10
Fig 1. Typical Output Characteristics
Fig 3. Typical Output Characteristics
1
1
1
0.1
0.1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
2
V GS , Gate-to-Source Voltage (V)
T
J
= 150°C
Q1 - Control FET
3
T
2.5V
1
J
2.5V
1
= 25°C
≤ 60µs PULSE WIDTH
Tj = 25°C
4
≤ 60µs PULSE WIDTH
Tj = 150°C
V
≤ 60µs PULSE WIDTH
DS
TOP
BOTTOM
TOP
BOTTOM
= 10V
10
10
5
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
100
100
Typical Characteristics
6
10000
10000
1000
1000
0.01
100
100
100
0.1
0.1
0.1
Fig 6. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
10
10
10
Fig 4. Typical Output Characteristics
1
1
1
0.1
0.1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1
V GS , Gate-to-Source Voltage (V)
Q2 - Synchronous FET
T
J
= 150°C
2
2.5V
1
1
2.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
3
≤ 60µs PULSE WIDTH
Tj = 150°C
V
≤ 60µs PULSE WIDTH
DS
TOP
BOTTOM
TOP
BOTTOM
= 10V
T
10
10
J
= 25°C
4
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
100
5
3