IRF8915 International Rectifier, IRF8915 Datasheet - Page 5
![MOSFET 2N-CH 20V 8.9A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF8915
Manufacturer Part Number
IRF8915
Description
MOSFET 2N-CH 20V 8.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF8915TR.pdf
(10 pages)
Specifications of IRF8915
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18.3 mOhm @ 8.9A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
7.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
540pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS non-compliant
Other names
*IRF8915
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF8915PBF
Manufacturer:
CYPRESS
Quantity:
24 970
Part Number:
IRF8915PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF8915TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.01
100
0.1
9
8
7
6
5
4
3
2
1
0
10
1
1E-006
25
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
T A , Ambient Temperature (°C)
0.20
0.10
0.02
50
Ambient Temperature
0.05
0.01
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
100
0.0001
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
0.01
Fig 10. Threshold Voltage vs. Temperature
i/Ri
R
3.0
2.5
2.0
1.5
1.0
1
R
1
-75
τ
2
τ
R
2
2
-50
R
2
0.1
-25
R
τ
3
3
R
τ
T J , Temperature ( °C )
3
3
I D = 250µA
1. Duty factor D =
2. Peak T
Notes:
0
τ
R
4
τ
4
R
4
25
4
1
J
= P
τ
C
τ
DM
Ri (°C/W) τi (sec)
50
3.68799
2.18971
34.7298
21.8971
x Z
t / t
1
thJA
75
P
2
DM
+ T
10
100
A
t
1
0.000349
0.005246
0.470610
13.52000
t
2
125
5
150
100