IRF8915 International Rectifier, IRF8915 Datasheet - Page 2
![MOSFET 2N-CH 20V 8.9A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF8915
Manufacturer Part Number
IRF8915
Description
MOSFET 2N-CH 20V 8.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF8915TR.pdf
(10 pages)
Specifications of IRF8915
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18.3 mOhm @ 8.9A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
7.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
540pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS non-compliant
Other names
*IRF8915
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF8915PBF
Manufacturer:
CYPRESS
Quantity:
24 970
Part Number:
IRF8915PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF8915TRPBF
Manufacturer:
IR
Quantity:
20 000
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
Static @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
GS(th)
AS
SD
DS(on)
g
sw
oss
iss
oss
rss
rr
Q
Q
Q
Q
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 25°C (unless otherwise specified)
Parameter
Ã
Parameter
Parameter
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.7
20
12
0.015
14.6
21.6
0.61
0.79
–––
–––
-4.8
–––
–––
–––
–––
–––
540
180
–––
–––
–––
4.9
1.8
1.7
2.3
2.7
6.0
7.1
3.6
3.5
12
91
13
18.3
-100
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
2.5
1.0
7.4
2.5
1.0
5.2
–––
–––
27
71
19
mV/°C
V/°C
mΩ
µA
nA
nC
nC
nC
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 6
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
= 7.1A
= 7.1A
= 25°C, I
= 25°C, I
= V
= 16V, V
= 16V, V
= 10V, I
= 10V
= 10V, V
= 10V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 4.5V, V
= 0V
GS
Max.
, I
7.1
15
D
Conditions
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
GS
= 250µA
GS
= 7.1A, V
= 7.1A
= 7.1A, V
= 8.9A
= 7.1A
www.irf.com
e
= 0V
= 0V, T
= 0V
= 4.5V
D
e
e
= 1mA
G
GS
DD
J
= 125°C
= 10V
= 0V
Units
mJ
A
D
S
e