BAT85 NXP Semiconductors, BAT85 Datasheet - Page 2
BAT85
Manufacturer Part Number
BAT85
Description
DIODE, SCHOTTKY, DO-34
Manufacturer
NXP Semiconductors
Datasheet
1.BAT85.pdf
(8 pages)
Specifications of BAT85
Voltage Vrrm
30V
Av Current If
200mA
Max Voltage Vf
0.4V
Max Reverse Recoverytime, Trr
4ns
Max Current Ifs
5A
Operating Temperature Range
-65°C To +125°C
Diode Case Style
DO-34
No.
RoHS Compliant
Diode Type
Schottky
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NXP Semiconductors
FEATURES
• Low forward voltage
• Guard ring protected
• Hermetically-sealed leaded glass
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2000 May 25
V
I
I
I
I
T
T
T
SYMBOL
F
F(AV)
FRM
FSM
package.
stg
j
amb
R
Schottky barrier diode
continuous reverse voltage
continuous forward current
average forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
PARAMETER
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
handbook, halfpage
PCB mounting, lead length = 4 mm;
V
T
t
t
p
p
amb
RWM
≤ 1 s; δ 0.5
≤ 10 ms
= 50 °C; see Fig.2
= 25 V; a = 1.57; δ = 0.5;
2
k
CONDITIONS
−
−
−
−
−
−65
−
−65
MIN.
a
Product data sheet
30
200
200
300
5
+150
125
+125
MAX.
MAM193
BAT85
V
mA
mA
mA
A
°C
°C
°C
UNIT