IRF9953 International Rectifier, IRF9953 Datasheet - Page 4

• Manufacturer Part Number: IRF9953
• Description: MOSFET 2P-CH 30V 2.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9953

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9953

IRF9953
Fig 7. Typical On-Resistance Vs. Gate
0 . 8 0
0 . 6 0
0 . 4 0
0 . 2 0
0 . 0 0
2.0
1.5
1.0
0.5
0.0
Fig 5. Normalized On-Resistance
0
-60 -40 -20
I =
D
-V
-1.0A
G S
Vs. Temperature
T , Junction Temperature ( C)
3
J
, G ate -to-S ource V oltage ( V)
Voltage
0
20 40 60 80 100 120 140 160
6
9
I
D
= -2.3A
V
1 2
°
GS
=
-10V
1 5
A
150
120
Fig 6. Typical On-Resistance Vs. Drain
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
90
60
30
0
0 . 0
25
Fig 8. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
1 . 0
50
Vs. Drain Current
-I , D rain C urrent (A )
J
D
Current
2 . 0
75
V
G S
100
3 . 0
= -4.5V
TOP
BOTTOM
V
G S
125
4 . 0
= -10V
-0.58A
-1.0A
-1.3A
°
I D
150
5 . 0
A