IRF9953 International Rectifier, IRF9953 Datasheet - Page 2

• Manufacturer Part Number: IRF9953
• Description: MOSFET 2P-CH 30V 2.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9953

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9953

IRF9953
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
d(off)
f
SM
I
r
S
DSS
rr
V
fs
(BR)DSS
GS(th)
GSS
gs
gd
iss
oss
rss
SD
g
DS(on)
rr
Repetitive rating; pulse width limited by
(BR)DSS
R
Starting T
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t
G
= 25 , I
/ T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
= 25°C, L = 67mH
AS
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
= -1.3A.
Parameter
Parameter
10sec.
J
= 25°C (unless otherwise specified)
Pulse width
I
T
Min. Typ. Max. Units
Min. Typ. Max. Units
SD
––– 0.015 –––
––– 0.165 0.250
––– 0.290 0.400
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
––– 0.82
J
150°C
-1.3A, di/dt
-2.4
–––
–––
–––
–––
–––
––– -100
190
120
–––
1.7
9.7
6.9
–––
6.1
1.1
20
61
14
31
27
–––
–––
–––
-2.0
100
–––
–––
–––
-25
3.4
2.2
1.2
300µs; duty cycle
16
12
19
28
40
14
1.3
54
62
-92A/µs, V
V/°C
µA
nA
nC
ns
pF
nC
ns
V
V
S
V
A
V
V
V
V
V
R
V
ƒ = 1.0MHz, See Fig. 5
Reference to 25°C, I
V
V
V
V
I
V
V
V
I
R
V
showing the
T
di/dt = -100A/µs
MOSFET symbol
p-n junction diode.
T
integral reverse
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
DD
= -2.3A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= 10
= 24V, V
= 24V, V
= V
= -15V, I
= 0V
= 0V, I
= 10V, I
= 4.5V, I
= -20V
= 20V
= -10V
= -10V, See Fig. 10
= -15V
= -10V
2%.
V
GS
Conditions
(BR)DSS
, I
D
F
S
D
D
Conditions
= -250µA
D
GS
GS
= -1.25A
D
= -1.25A, V
= -250µA
= -1.0A
= -0.50A
= -2.3A
,
= 0V
= 0V, T
D
= -1mA
J
GS
= 55°C
G
= 0V
S
D