IRF7311TR International Rectifier, IRF7311TR Datasheet - Page 4

• Manufacturer Part Number: IRF7311TR
• Description: MOSFET 2N-CH 20V 6.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7311TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7311
Fig 7. Typical On-Resistance Vs. Gate
0 . 0 5
0 . 0 4
0 . 0 3
0 . 0 2
0 . 0 1
Fig 5. Normalized On-Resistance
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
0
I =
D
V
6.0A
Vs. Temperature
G S
T , Junction Temperature ( C)
J
2
, Gate-to-Source Voltage (V)
Voltage
0
20 40
I
D
= 6.6A
4
60
80 100 120 140 160
6
V
°
GS
=
4.5V
8
A
0 . 0 3 2
0 . 0 2 8
0 . 0 2 4
0 . 0 2 0
300
250
200
150
100
Fig 6. Typical On-Resistance Vs. Drain
50
0
25
0
Fig 8. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
50
Vs. Drain Current
J
V
I , Drain C urrent (A)
D
G S
1 0
Current
75
= 2.7V
V
G S
= 4.5V
100
TOP
BOTTOM
2 0
125
°
1.8A
3.3A
4.1A
I D
150
3 0
A