IRF7311TR International Rectifier, IRF7311TR Datasheet
IRF7311TR
Manufacturer Part Number
IRF7311TR
Description
MOSFET 2N-CH 20V 6.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7311TR.pdf
(7 pages)
Specifications of IRF7311TR
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 4.5V
Input Capacitance (ciss) @ Vds
900pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7311TR(WHITE)
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7311TRPBF
Manufacturer:
IR
Quantity:
20 000
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( T
Thermal Resistance Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Fully Avalanche Rated
Parameter
A
= 25°C Unless Otherwise Noted)
T
T
T
T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
G 2
G 1
S2
S 1
Symbol
T
dv/dt
J,
V
V
E
E
I
P
I
I
D
DM
I
T
AR
DS
GS
D
AR
AS
S
STG
1
2
3
4
T o p V ie w
Symbol
R
HEXFET
JA
8
7
6
5
-55 to + 150
Maximum
D 1
D 1
D 2
D 2
S O -8
± 12
0.20
100
2.5
2.0
1.3
4.1
5.0
20
6.6
5.3
26
®
R
IRF7311
Limit
Power MOSFET
DS(on)
62.5
V
DSS
PD - 91435C
= 0.029
= 20V
Units
Units
°C/W
V/ ns
mJ
mJ
V
°C
W
A
A
5/29/01
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IRF7311TR Summary of contents
Page 1
... Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...
Page 2
IRF7311 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
Page 3
VGS TOP 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V 10 1.50V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° ...
Page 4
IRF7311 2.0 6. 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J Fig 5. Normalized On-Resistance Vs. Temperature ...
Page 5
iss ...
Page 6
IRF7311 SO-8 Package Details 0.25 [.010 NOT DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. ...
Page 7
SO-8 Tape and Reel . . ...