DMN5L06DW-7 Diodes Inc, DMN5L06DW-7 Datasheet - Page 3

• Manufacturer Part Number: DMN5L06DW-7
• Description: MOSFET N-CHAN DUAL 200MW SOT-363
• Manufacturer: Diodes Inc

Specifications of DMN5L06DW-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 280mA
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: DMN5L06DWDITR

DMN5L06DW
Document number: DS30751 Rev. 2 - 2
250
200
150
100
50
0
-50
Fig. 7
T , CHANNEL TEMPERATURE ( C)
T , AMBIENT TEMPERATURE ( C)
A
ch
Static Drain-Source On-State Resistance
Fig. 11 Derating Curve - Total
0
vs. Channel Temperature
50
100
°
°
150
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Fig.10 Forward Transfer Admittance vs. Drain Current
I , DRAIN CURRENT (A)
D
DMN5L06DW
© Diodes Incorporated
September 2007
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