DMN5L06DW-7 Diodes Inc, DMN5L06DW-7 Datasheet - Page 2

• Manufacturer Part Number: DMN5L06DW-7
• Description: MOSFET N-CHAN DUAL 200MW SOT-363
• Manufacturer: Diodes Inc

Specifications of DMN5L06DW-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 280mA
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: DMN5L06DWDITR

DMN5L06DW
Document number: DS30751 Rev. 2 - 2
0.9
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
0.3
0.6
0
10
0
0
V
-50
GS
Fig. 5 Static Drain-Source On-Resistance
T , CHANNEL TEMPERATURE (°C)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
= 10V
ch
DS
-25
8V
6V
5V
4V
3V
1
I , DRAIN CURRENT (A)
D
0
vs. Drain Current
2
25
50
3
75
10V
5V
4V
100 125 150
3V
4
8V
6V
5
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1
2 of 5
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
0.1
10
1
Fig. 6 Static Drain-Source On-Resistance
Fig. 2 Typical Transfer Characteristics
V
V
GS
GS,
I DRAIN CURRENT (A)
D ,
, GATE-SOURCE VOLTAGE (V)
GATE SOURCE VOLTAGE (V)
vs. Gate-Source Voltage
DMN5L06DW
© Diodes Incorporated
September 2007