ZDM4206NTA Diodes Zetex, ZDM4206NTA Datasheet - Page 3

• Manufacturer Part Number: ZDM4206NTA
• Description: MOSFET 2N-CH 60V 1A SOT-223-8
• Manufacturer: Diodes Zetex

Specifications of ZDM4206NTA

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 100pF @ 25V
• Power - Max: 2.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (8 leads), SM8
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: ZDM4206NTR

10
10
1000
8
8
4
4
6
6
2
2
900
800
700
600
500
200
0
0
400
300
100
1.0
0.1
0.1
10
0
Voltage Saturation Characteristics
Voltage Saturation Characteristics
Transconductance v drain current
0
0
0.1
0.1
0
On-resistance v drain current
On-resistance v drain current
V
V
GS-
GS-
1
V
V
I
2
2
D
Gate Source Voltage (Volts)
Gate Source Voltage (Volts)
GS
GS
I
I
2
- Drain Current (Amps)
D-
D-
=3.5V
=3.5V
Drain Current (Amps)
Drain Current (Amps)
3
V
DS=
4
4
4
TYPICAL CHARACTERISTICS
10V
4.5V
4.5V
1.0
1.0
5
6
6
6
6V
6V
7
8
8
8V 10V
8V 10V
8
9
20V
14V
14V
20V
10
10
10
I
I
3A
3A
1.5A
1.5A
10
10
D=
D=
0.5A
0.5A
3 - 319
Normalised R
Normalised R
Transconductance v gate-source voltage
1000
900
800
700
600
500
200
100
400
300
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
6
6
4
4
2
2
0
0
0
0
0
0
-50 -25
-50 -25
1
Transfer Characteristics
Transfer Characteristics
V
V
V
2
2
2
GS-
GS-
GS
DS(on)
DS(on)
T
T
0 25 50 75 100
0 25 50 75 100
Gate Source Voltage (Volts)
Gate Source Voltage (Volts)
-Gate Source Voltage (Volts)
j
j
-Junction Temperature (°C)
-Junction Temperature (°C)
3
V
V
DS=
DS=
4
4
and V
and V
4
10V
10V
ZDM4206N
V
DS=
5
10V
GS(th)
GS(th)
6
6
6
125
125
7
v Temperature
v Temperature
150
150
8
8
8
175 200
175 200 225
V
I
D=
V
I
GS=
D=
GS=
1.5A
1mA
9
10V
V
DS
10
10
225
10