ZDM4206NTA Diodes Zetex, ZDM4206NTA Datasheet
ZDM4206NTA
Manufacturer Part Number
ZDM4206NTA
Description
MOSFET 2N-CH 60V 1A SOT-223-8
Manufacturer
Diodes Zetex
Datasheet
1.ZDM4206NTC.pdf
(3 pages)
Specifications of ZDM4206NTA
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
100pF @ 25V
Power - Max
2.25W
Mounting Type
Surface Mount
Package / Case
SOT-223 (8 leads), SM8
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-
Other names
ZDM4206NTR
SM-8 DUAL N-CHANNEL ENHANCEMENT
MODE AVALANCHE RATED MOSFET
ISSUE 1 - NOVEMBER 1995
ABSOLUTE MAXIMUM RATINGS.
THERMAL CHARACTERISTICS
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
PARTMARKING DETAIL – M4206N
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Continuous Body Diode Current at T
Avalanche Current – Repetitive
Avalanche Energy – Repetitive
Operating and Storage Temperature Range
PARAMETER
Total Power Dissipation at T
Any single die “on”
Both die “on” equally
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
D
D
D
D
1
1
2
2
amb
amb
= 25°C*
=25°C
amb
=25°C
G
S
G
S
1
2
1
2
3 - 317
SYMBOL
V
I
V
I
I
T
I
E
D
DM
SD
AR
DS
GS
AR
j
:T
SYMBOL
P
stg
tot
-55 to +150
VALUE
VALUE
2.25
2.75
55.6
45.5
18
22
600
60
15
1
8
1
20
ZDM4206N
(8 LEAD SOT223)
SM-8
mW/ °C
mW/ °C
°C/ W
°C/ W
UNIT
UNIT
mA
mJ
W
W
°C
V
A
A
V
A
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ZDM4206NTA Summary of contents
Page 1
SM-8 DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET ISSUE 1 - NOVEMBER 1995 PARTMARKING DETAIL – M4206N ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed Drain Current Gate-Source ...
Page 2
ZDM4206N ELECTRICAL CHARACTERISTICS (at T PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance(1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance ...
Page 3
TYPICAL CHARACTERISTICS Gate Source Voltage (Volts) Gate Source Voltage (Volts) GS- GS- Voltage Saturation Characteristics Voltage Saturation Characteristics ...