BTS7904B Infineon Technologies, BTS7904B Datasheet
BTS7904B
Specifications of BTS7904B
Related parts for BTS7904B
BTS7904B Summary of contents
Page 1
... Product Summary DS(on),max I D Marking 7904B Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse =± =25 °C tot stg page 1 BTS7904B P -30 55 12.7 11.7 5) -40 40 PG-TO263-5-1 Value P N -40 40 -40 40 -160 160 350 200 - + -55 ... 150 55/150/ Unit °C 2008-07-18 ...
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... =- DSS T =25 ° =- =125 ° = =25 ° = =125 ° =- GSS = =- =-20 A DS( =-4 =- page 2 Values min. typ. max -1.5 -2.1 1.2 1.7 2 -0. -100 = 0. 100 = -10 -100 = 100 - 6.9 12.7 - 9.4 11.7 - 17.2 20.7 - 16.5 20.2 BTS7904B Unit K µ 2008-07-18 ...
Page 3
... Gate plateau voltage 1.0 Symbol Conditions P C iss =±25 V, oss MHz rss d( d(off =- =- =- plateau = = plateau page 3 BTS7904B Values Unit min. typ. max. - 3900 5200 pF - 4600 6100 - 1000 1300 - 570 760 - 850 1300 - 550 820 - 104 - - 150 - - -12 - -30 -45 - -80 -121 - -3 123 4.2 2008-07-18 ...
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... Parameter Reverse Diode Diode continuous forward 2) current Diode pulse current Diode forward voltage 2) Reverse recovery time 2) Reverse recovery charge 1.0 Symbol Conditions =25 ° S,pulse =- =25 ° = =25 ° = /dt =400 A/µ page 4 BTS7904B Values Unit min. typ. max - -160 160 - -1.00 -1 0. 2008-07-18 ...
Page 5
... C GS 100 [° Drain current ( parameter: V ≥ [°C] C 1.0 2 Power dissipation ( tot 100 120 140 160 4 Drain current ( parameter 100 120 140 160 0 page 5 BTS7904B ≥ 100 120 T [°C] C ≥ 100 120 T [°C] C 2008-07-18 140 160 140 160 ...
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... 0.5 0 0.05 0.01 single pulse - [s] p 1.0 6 Safe operating area ( parameter µ 100 µ [V] 8 Max. transient thermal impedance (N) Z =f(t thJC parameter page =25 ° 100 µ [ 0.5 0.1 0.05 0.01 single pulse - [s] p BTS7904B 1 µs 10 µ 2008-07-18 ...
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... V GS 120 -5 V -10 V -4.5 V 100 Typ. drain-source on resistance ( =25 °C DS(on parameter 1.0 10 Typ. output characteristics ( parameter: V 120 -4 V 100 Typ. drain-source on resistance (N) R =f(I DS(on) parameter - [A] page =25 ° 4 =25 ° 3 4 [A] D BTS7904B 3 2008-07-18 ...
Page 8
... GS DS parameter 100 80 60 -55 ° Drain-source on-state resistance ( =-10 V DS(on -60 - [°C] j 1.0 14 Typ. transfer characteristics ( parameter: T 100 80 25 °C 60 150 ° [ Drain-source on-state resistance (N) R =f(T DS(on 100 140 page °C -55 °C 150 ° [ = = -60 - 100 T [°C] j BTS7904B 140 2008-07-18 ...
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... T [° Typ. capacitances ( MHz 1.0 18 Typ. gate threshold voltage (N) V =f(T GS(th) parameter: I 2.5 2 1 100 140 20 Typ. capacitances ( Ciss Coss 3 10 Crss [V] page 200 µA 40 µA -60 - 100 T [° MHz GS Crss [V] DS BTS7904B 140 Ciss Coss 30 2008-07-18 ...
Page 10
... AV 1.0 22 Forward characteristics of reverse diode ( parameter 1.5 2 [V] 24 Avalanche characteristics ( parameter: T 100 25 °C 100 °C 125 ° 100 1000 page °C 150 °C 0 0.5 1 1 =25 GS j(start) 100 °C 125 ° 100 t [µs] AV BTS7904B 2 25 °C 1000 2008-07-18 ...
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... I =-40 A pulsed GS gate D parameter gate 27 Drain-source breakdown voltage ( =-1 mA BR(DSS -60 - [°C] j 1.0 26 Typ. gate charge (N) V =f(Q GS parameter - 100 [nC] 28 Drain-source breakdown voltage (N) V BR(DSS 100 140 page =40 A pulsed gate [nC] gate =f -60 - 100 T [°C] j BTS7904B 100 140 2008-07-18 ...
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... Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...
Page 13
... Defined by design, not subject to production tests 3) Qualified at -5V and +16V. 4) Device 1.5 mm epoxy PCB FR4 with 6 cm drain connection. PCB is vertical in still air. 5) Rdson defined from Source pin to Drain back side of the package 1.0 Date Changes 2 (one layer, 70 µm thick) copper area for page 13 BTS7904B 2008-07-18 ...