BSO303P Infineon Technologies, BSO303P Datasheet - Page 5

• Manufacturer Part Number: BSO303P
• Description: MOSFET P-CHAN DUAL 30V DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.2A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 72.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1761pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 32 m Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 8.2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO303PNT; BSO303PT; SP000012622

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
Rev.1.2
= f ( V
= f (V
A
A
70
60
55
50
45
40
35
30
25
20
15
10
35
25
20
15
10
5
0
5
0
0
0
DS
GS
0.5
); T
); |V
p
p
= 80 µs
2
= 80 µs
j
=25°C
DS
1
|≥ 2 x |I
1.5
Vgs = -5V
Vgs = -6V
Vgs = -7V
Vgs = -10V
4
2
D
| x R
6
2.5
Vgs = -2.5V
Vgs = -3V
DS(on)max
Vgs = -3.5V
Vgs = -4V
3
Vgs = -4.5V
V
V
- V DS
- V
GS
10
4
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: t p = 80 µs
fs
DS(on)
= f(I
0.06
0.04
0.03
0.02
0.01
Ω
S
40
20
10
0
0
5
0
D
= f (I
); T
VGS = -3V
10
5
j
=25°C
D
GS
)
15
10
20
15
VGS = -3.5V
25
20
30
25
VGS = -5V
VGS = -6V
VGS = -8V
VGS = -10V
2002-01-08
BSO303P
VGS = -4.5V
VGS = -4V
A
A
- I
- I
D
D
40
35