UPA2590T1H-T1-AT Renesas Electronics America, UPA2590T1H-T1-AT Datasheet - Page 12

• Manufacturer Part Number: UPA2590T1H-T1-AT
• Description: MOSFET N/P-CH 30V 8VSOF
• Manufacturer: Renesas Electronics America

Specifications of UPA2590T1H-T1-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 6.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 10V
• Power - Max: 1.24W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10
-0.0001
-0.001
-0.01
-100
-0.1
140
120
100
100
-10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
60
40
20
10
-1
0
1
-0.1
-50 -25
0
V
SWITCHING CHARACTERISTICS
F(S-D)
T
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0
- Channel Temperature - ° C
t
t
f
r
- Source to Drain Voltage - V
I
D
0.5
25
-1
- Drain Current - A
V
50
GS
t
t
= −4.5 V
d(off)
d(on)
75 100 125 150 175
−10 V
-10
1
V
V
R
DD
GS
G
I
Pulsed
V
Pulsed
D
= 6 Ω
= − 15 V
= − 10 V
GS
= −2 A
= 0 V
Data Sheet G19217EJ1V0DS
-100
1.5
1000
100
-25
-20
-15
-10
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-5
0
-0.01
0
V
f = 1.0 MHz
GS
1
V
= 0 V
DS
-0.1
- Drain to Source Voltage - V
V
2
Q
DD
G
= −24 V
- Gate Charge - nC
3
−15 V
V
−6 V
DS
-1
4
V
5
GS
-10
I
D
6
= −4.5 A
μ
C
C
C
7
iss
oss
rss
PA2590
-100
8
-10
-8
-6
-4
-2
0