UPA2590T1H-T2-AT Renesas Electronics America, UPA2590T1H-T2-AT Datasheet
UPA2590T1H-T2-AT
Specifications of UPA2590T1H-T2-AT
Related parts for UPA2590T1H-T2-AT
UPA2590T1H-T2-AT Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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DESCRIPTION μ The PA2590 is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. FEATURES • 4.5 V drive available ...
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ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit Note2 Total ...
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ELECTRICAL CHARACTERISTICS (T N-channel MOSFET CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise ...
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P-channel MOSFET CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...
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TYPICAL CHARACTERISTICS (T A (1) N-channel MOSFET DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA 100 ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 0.4 0.8 1 Drain to Source Voltage - V DS GATE TO SOURCE ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 120 100 4 Pulsed 0 -50 - 100 125 150 175 - Channel Temperature - °C ...
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P-channel MOSFET DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA -100 I D(pulse) -10 I ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -18 -16 −10 V -14 - −4 - Pulsed 0 0 -0.4 -0.8 -1.2 -1 Drain to Source Voltage - V DS GATE ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 140 120 = −4 100 80 60 − -50 - 100 125 150 175 - Channel Temperature - ° ...
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The information in this document is current as of May, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...