UPA2590T1H-T2-AT Renesas Electronics America, UPA2590T1H-T2-AT Datasheet - Page 9

• Manufacturer Part Number: UPA2590T1H-T2-AT
• Description: MOSFET N/P-CH 30V 8VSOF
• Manufacturer: Renesas Electronics America

Specifications of UPA2590T1H-T2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 6.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 10V
• Power - Max: 1.24W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.0001
0.001
0.01
120
100
100
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.1
80
60
40
20
10
10
0
1
1
-50 -25
0.1
0
V
SWITCHING CHARACTERISTICS
F(S-D)
T
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0
- Channel Temperature - °C
- Source to Drain Voltage - V
I
D
0.5
25
1
- Drain Current - A
50
V
GS
t
t
d(off)
= 4.5 V
75 100 125 150 175
d(on)
10 V
10
1
t
t
r
f
V
V
R
V
Pulsed
DD
GS
G
GS
I
Pulsed
D
= 6 Ω
= 15 V
= 10 V
= 2 A
= 0 V
Data Sheet G19217EJ1V0DS
100
1.5
1000
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
25
20
15
10
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
5
0
0.01
0
V
f = 1.0 MHz
GS
V
= 0 V
1
DS
0.1
- Drain to Source Voltage - V
Q
V
2
G
DD
- Gate Charge - nC
V
= 24 V
DS
15 V
3
6 V
1
V
GS
4
5
10
I
D
= 4.5 A
μ
C
C
C
6
PA2590
iss
oss
rss
100
7
10
8
6
4
2
0
7