UPA2791GR-E1-AT Renesas Electronics America, UPA2791GR-E1-AT Datasheet - Page 9

• Manufacturer Part Number: UPA2791GR-E1-AT
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA2791GR-E1-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.01
100
100
100
0.1
80
60
40
20
10
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0
1
1
-50
0.1
0
I
Pulsed
D
V
= 3.0 A
V
SWITCHING CHARACTERISTICS
t
GS
f
T
F(S-D)
t
ch
= 4.5 V
r
- Channel Temperature - °C
0
- Source to Drain Voltage - V
I
D
0.5
1
- Drain Current - A
t
t
d(off)
d(on)
50
V
0 V
GS
= 4.5 V
10
1
10 V
100
V
V
R
DD
GS
G
Pulsed
= 10 Ω
= 15 V
= 10 V
Data Sheet G18207EJ2V0DS
100
1.5
150
1000
100
100
10
30
25
20
15
10
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
5
0
1
0.01
0.1
0
V
f = 1 MHz
V
di/dt = 50 A/μs
GS
GS
DIODE FORWARD CURRENT
REVERSE RECOVERY TIME vs.
V
= 0 V
= 0 V
2
DS
I
F
0.1
- Drain to Source Voltage - V
V
- Diode Forward Current - A
Q
DD
G
4
1
= 24 V
- Gate Charge - nC
V
15 V
DS
6 V
V
1
6
GS
C
C
C
iss
oss
rss
10
8
μ
PA2791GR
10
I
D
10
= 5 A
100
100
12
12
10
8
6
4
2
0
7