NTUD3169CZT5G ON Semiconductor, NTUD3169CZT5G Datasheet - Page 7

• Manufacturer Part Number: NTUD3169CZT5G
• Description: MOSFET N/P-CH 20V SOT-963
• Manufacturer: ON Semiconductor

Specifications of NTUD3169CZT5G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 220mA, 200mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 12.5pF @ 15V
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 0.48 S, 0.35 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.22 A @ N Channel or 0.2 A @ P Channel
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

18
16
14
12
10
8
6
4
2
0
0
C
C
C
rss
2
iss
oss
Figure 16. Capacitance Variation
DRAIN−TO−SOURCE VOLTAGE (V)
4
6
8
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
10
0
TYPICAL CHARACTERISTICS (P−CHANNEL)
0
Figure 18. Diode Forward Voltage vs. Current
12
V
T
GS
J
= 25°C
14
V
= 0 V
SD
0.2
, SOURCE−TO−DRAIN VOLTAGE (V)
V
T
GS
16
J
= 25°C
= 0 V
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18
0.4
20
7
1000
0.6
100
10
1
1
Figure 17. Resistive Switching Time Variation
V
I
V
D
DD
GS
= 200 mA
0.8
= 10 V
= 4.5 V
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
1
10
t
t
t
t
d(off)
d(on)
f
r
100