NTUD3169CZT5G ON Semiconductor, NTUD3169CZT5G Datasheet - Page 6

• Manufacturer Part Number: NTUD3169CZT5G
• Description: MOSFET N/P-CH 20V SOT-963
• Manufacturer: ON Semiconductor

Specifications of NTUD3169CZT5G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 220mA, 200mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 12.5pF @ 15V
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 0.48 S, 0.35 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.22 A @ N Channel or 0.2 A @ P Channel
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
12
1.75
1.50
1.25
1.00
0.75
0.50
0
8
4
0
1
0
−50
Figure 12. On−Resistance vs. Gate Voltage
Figure 14. On−Resistance Variation with
Figure 10. On−Region Characteristics
I
V
D
−25
V
V
GS
DS
= 200 mA
GS
1
, DRAIN−TO−SOURCE VOLTAGE (V)
= 4.5 V
, GATE−TO−SOURCE VOLTAGE (V)
T
2
J
, JUNCTION TEMPERATURE (°C)
0
V
GS
Temperature
= 2.2 thru 5 V
2
25
3
50
TYPICAL CHARACTERISTICS (P−CHANNEL)
2.0 V
3
75
I
T
D
J
= 200 mA
4
= 25°C
100
T
4
J
= 25°C
1.6 V
1.8 V
1.4 V
1.2 V
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125
5
5
150
6
10,000
1000
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
100
10
0
4
3
2
1
0
0.05
0
0
Figure 15. Drain−to−Source Leakage Current
V
Figure 13. On−Resistance vs. Drain Current
V
DS
T
GS
J
≥ 5 V
= 25°C
0.10
V
Figure 11. Transfer Characteristics
V
= 0 V
DS
GS
4
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
1
I
D
0.15
, DRAIN CURRENT (A)
and Gate Voltage
T
J
vs. Voltage
8
= −55°C
V
V
GS
GS
T
T
0.20
= 4.5 V
= 2.5 V
J
J
2
= 125°C
= 150°C
12
0.25
T
J
T
= 25°C
J
= 125°C
3
16
0.30
0.35
20
4