AO7600 Alpha & Omega Semiconductor Inc, AO7600 Datasheet - Page 3

• Manufacturer Part Number: AO7600
• Description: MOSFET N/P-CH COMPL 20V SC70-6
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO7600

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 900mA, 600mA
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 120pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1093-2

AO7600
Alpha & Omega Semiconductor, Ltd.
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
480
440
400
360
320
280
240
200
160
10
500
460
420
380
340
300
260
220
180
140
8
6
4
2
0
0
0
1
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
V
GS
2
Fig 1: On-Region Characteristics
1
=1.8V
1
10V
3
2
Gate Voltage
V
V
DS
V
4
GS
GS
I
(Volts)
D
=2.5V
(Volts)
2
(A)
25°C
5
3
125°C
V
8V
GS
I
D
V
6
=4.5V
=0.9A
GS
3
=2V
4
2.5V
3.5V
3V
4V
7
5V
5
4
8
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
4
3
2
1
0
1.8
1.6
1.4
1.2
0.8
0
1
0.0
0
0.5
Figure 2: Transfer Characteristics
25
Figure 6: Body-Diode Characteristics
Figure 4: On-Resistance vs. Junction
125°C
0.4
V
DS
=5V
50
1
V
25°C
I
Temperature (°C)
D
GS
=0.75A
V
Temperature
0.8
=2.5V
GS
V
75
SD
(Volts)
1.5
(Volts)
25°C
100
1.2
V
I
D
GS
=0.7A
2
=1.8V
125
V
I
GS
D
1.6
=0.9A
www.aosmd.com
125°C
2.5
=4.5V
150
2.0
175
3