AO7600 Alpha & Omega Semiconductor Inc, AO7600 Datasheet

MOSFET N/P-CH COMPL 20V SC70-6

AO7600

Manufacturer Part Number
AO7600
Description
MOSFET N/P-CH COMPL 20V SC70-6
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO7600

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 900mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
900mA, 600mA
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
1.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
120pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1093-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO7600
Manufacturer:
Alpha & Omega Semiconductor In
Quantity:
28 070
Part Number:
AO7600
Manufacturer:
AOS/万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO7600
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO7600/L uses advanced trench
technology MOSFETs to provide excellent
R
complementary MOSFETs may be used
to form a level shifted high side switch, an
inverter, and for a host of other
applications. Both devices are ESD
protected. AO7600 and AO7600L are
electrically identical.
-RoHS Compliant
-AO7600L is Halogen Free
DS(ON)
A
and low gate charge. The
S1
G1
D2
(SOT-323)
Top View
SC-70-6
1
2
3
6
5
4
D1
G2
S2
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
C
C
A
A
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
Steady-State
Steady-State
t ≤ 10s
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
Features
n-channel
V
I
R
< 300mΩ (V
< 350mΩ (V
< 450mΩ (V
, T
D
DS
DS(ON)
= 0.9A (V
STG
(V) = 20V
n-channel
G
Symbol
GS
GS
GS
GS
Max n-channel
R
R
R
R
=4.5V)
=4.5V)
=2.5V)
=1.8V)
θJA
θJL
θJA
θJL
-55 to 150
D1
S1
0.19
0.9
0.7
0.3
20
±8
5
R
Device
-0.6A (V
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
-20V
DS(ON)
G
p-channel
< 550mΩ (V
< 700mΩ (V
< 950mΩ (V
p-channel
GS
Max p-channel
D2
S2
=-4.5V)
Typ
360
400
300
360
400
300
-55 to 150
GS
GS
GS
-0.48
=-4.5V)
=-2.5V)
=-1.8V)
0.19
-0.6
-20
0.3
±8
-3
Max Units
415
460
350
415
460
350
www.aosmd.com
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO7600 Summary of contents

Page 1

... The DS(ON) complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications. Both devices are ESD protected. AO7600 and AO7600L are electrically identical. -RoHS Compliant -AO7600L is Halogen Free SC-70-6 (SOT-323) Top View ...

Page 2

... AO7600 N-Channel: Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...

Page 3

... AO7600 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10V (Volts) DS Fig 1: On-Region Characteristics 480 440 V =1.8V GS 400 360 320 V =2.5V GS 280 240 200 160 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 500 460 420 380 340 300 260 220 180 140 ...

Page 4

... AO7600 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =10V =0. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Q (nC) g Figure 7: Gate-Charge Characteristics 10.0 T =150°C, T =25°C J(Max DS(ON) 10ms limited 1.0 0.1s 1s 0.1 10s DC 0.0 0 (Volts) DS Figure 9: Maximum Forward Biased Safe ...

Page 5

... AO7600 P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...

Page 6

... AO7600 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 -10V (Volts) DS Fig 1: On-Region Characteristics 900 V =-1.8V GS 800 700 V GS 600 500 400 300 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 900 800 700 125°C 600 500 25°C 400 300 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

Page 7

... AO7600 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-10V DS I =-0. 0.0 0.5 1.0 -Q (nC) g Figure 7: Gate-Charge Characteristics 10.00 T =150°C, T =25°C J(Max DS(ON) 1.00 limited 0.10 1s 10s 0.01 0.00 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=T ...

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