AO6601 Alpha & Omega Semiconductor Inc, AO6601 Datasheet - Page 3

• Manufacturer Part Number: AO6601
• Description: MOSFET N/P-CH COMPL 30V 6-TSOP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO6601

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A, 2.3A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 4.34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 390pF @ 15V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1076-2

AO6601 n-channel typical characteristics
Alpha and Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
125
100
15
12
75
50
25
200
150
100
9
6
3
0
0
50
0
0
0
10V
Figure 3: On-Resistance vs. Drain Current and Gate
0
Figure 5: On-Resistance vs. Gate-Source Voltage
Fig 1: On-Region Characteristics
1
2
2
4.5V
2
V
4
4
V
DS
V
Voltage
3V
GS
GS
I
D
(Volts)
(Volts)
=2.5V
(A)
3
6
6
V
V
GS
2.5V
V
I
D
GS
GS
=2A
25°C
=4.5V
=10V
=2V
4
8
8
125°C
10
10
5
1.0E+01
1.0E+00
10
1.8
1.6
1.4
1.2
0.8
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
8
6
4
2
0
1
0
0
Figure 4: On-Resistance vs. Junction Temperature
0.0
0.5
25
Figure 2: Transfer Characteristics
Figure 6: Body-Diode Characteristics
0.2
125°C
50
1
V
Temperature (°C)
DS
0.4
=5V
1.5
V
75
GS
25°C
V
V
(Volts)
GS
SD
=4.5V
100
0.6
(Volts)
2
25°C
125
2.5
0.8
V
125°C
GS
=2.5V
V
150
3
GS
1.0
=10V
175
3.5
1.2