AO6601 Alpha & Omega Semiconductor Inc, AO6601 Datasheet
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AO6601
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AO6601 Summary of contents
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... AO6601 Complementary Enhancement Mode Field Effect Transistor General Description The AO6601/L uses advanced trench technology to provide excellent R and low gate charge. The DS(ON) complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AO6601 and AO6601L are electrically identical. -RoHS Compliant ...
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... AO6601 n-channel MOSFET Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO6601 n-channel typical characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10V (Volts) DS Fig 1: On-Region Characteristics 150 125 V =2.5V GS 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 150 100 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd 2.5V ...
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... AO6601 n-channel typical characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V DS I =3. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) 10.0 limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =110°C/W θJA 1 0.1 0.01 0.00001 0.0001 Alpha & ...
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... AO6601 p-channel MOSFET Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO6601 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V (Volts) DS Fig 1: On-Region Characteristics 250 225 200 175 150 125 100 Figure 3: On-Resistance vs. Drain Current and Gate Voltage 350 300 250 200 150 100 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. ...
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... AO6601 p-channel typical characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V DS I =-2. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25°C A 10.0 R DS(ON) limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J,PK ...