UPA679TB-T1-A Renesas Electronics America, UPA679TB-T1-A Datasheet - Page 9

• Manufacturer Part Number: UPA679TB-T1-A
• Description: MOSFET N/P-CH 20V SC-70
• Manufacturer: Renesas Electronics America

Specifications of UPA679TB-T1-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 570 mOhm @ 300mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 350mA, 250mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 28pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

(2) P-ch PART (T
- 0.8
- 0.6
- 0.4
- 0.2
- 1.6
- 1.4
- 1.2
- 0.8
- 0.6
120
100
- 1
- 1
80
60
40
20
0
0
-50
0
0
GATE CUT-OFF VOLTAGE vs. CHANNEL
TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Pulsed
V
25
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
T
V
T
G S
- 0.4
ch
A
DS
- Ambient Temperature - °C
= −4.5 V
- Channel Temperature - °C
- Drain to Source Voltage - V
0
50
A
= 25°C)
- 0.8
75
−4.0 V
50
100
- 1.2
−2.5 V
V
I
D
D S
125
= −1.0 m A
100
= −10.0 V
- 1.6
150
Data Sheet G16615EJ1V0DS
150
175
- 2
-0.0001
0.01
-0.001
0.1
0.24
0.16
0.12
0.08
0.04
-0.01
10
- 0.001
0.2
-0.1
1
-10
0
-1
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
FORWARD TRANSFER CHARACTERISTICS
0
T
0
A
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
= −25°C
V
Pulsed
25
T
D S
125°C
- 0.01
V
A
25°C
75°C
GS
- Ambient Temperature - °C
= −10.0 V
I
- Gate to Source Voltage - V
50
- 1
D
- Drain Current - A
Mounted on FR-4 board of
2500 m m
2 units total
75
- 0.1
- 2
100
T
2
x 1.1 m m
A
V
Pulsed
= 125°C
DS
125
−25°C
= −10.0 V
- 1
75°C
25°C
µ µ µ µ PA679TB
- 3
150
- 10
175
- 4
7