UPA679TB-T1-A Renesas Electronics America, UPA679TB-T1-A Datasheet - Page 7

• Manufacturer Part Number: UPA679TB-T1-A
• Description: MOSFET N/P-CH 20V SC-70
• Manufacturer: Renesas Electronics America

Specifications of UPA679TB-T1-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 570 mOhm @ 300mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 350mA, 250mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 28pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
0.8
0.6
0.4
0.2
1.2
0.8
0.6
0.4
0.2
1.2
0.8
0.6
0.4
0.2
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0
1
0
1
0
0.01
0.01
- 50
T
V
A
T
GS
A
= 125°C
T
= 2.5 V, I
= 125°C
−25°C
ch
−25°C
75°C
25°C
25°C
- Channel Temperature - °C
75°C
I
0
I
D
D
- Drain Current - A
0.1
- Drain Current - A
0.1
D
= 0.15 A
V
V
GS
GS
50
= 4.0 V, I
= 4.5 V, I
1
1
V
Pulsed
V
Pulsed
GS
100
GS
D
D
= 0.30 A
= 0.30 A
= 2.5 V
= 4.5 V
Pulsed
Data Sheet G16615EJ1V0DS
150
10
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.2
0.8
0.6
0.4
0.2
10
1.2
0.8
0.6
0.4
0.2
1
1
0
1
0
0.01
0.1
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
0
T
A
= 125°C
V
V
−25°C
DS
GS
75°C
25°C
2
- Drain to Source Voltage - V
- Gate to Source Voltage - V
I
D
0.1
1
- Drain Current - A
4
6
10
1
8
V
f = 1.0 MHz
V
Pulsed
GS
GS
µ µ µ µ PA679TB
I
Pulsed
D
= 0 V
= 4.0 V
C
C
C
= 0.30 A
10
iss
oss
rss
100
10
12
5