NTZD5110NT1G ON Semiconductor, NTZD5110NT1G Datasheet - Page 4

• Manufacturer Part Number: NTZD5110NT1G
• Description: MOSFET N-CH DUAL 60V SOT563-6
• Manufacturer: ON Semiconductor

Specifications of NTZD5110NT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 294mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 24.5pF @ 20V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.294 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ORDERING INFORMATION
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
NTZD5110NT1G
NTZD5110NT5G
cifications Brochure, BRD8011/D.
30
20
10
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
0
C
C
rss
oss
Figure 7. Capacitance Variation
Device
4
C
iss
8
0.01
0.1
10
1
0.4
12
Figure 9. Diode Forward Voltage vs. Current
V
GS
V
= 0 V
TYPICAL CHARACTERISTICS
SD
T
V
, SOURCE−TO−DRAIN VOLTAGE (V)
T
J
GS
16
0.6
J
= 25°C
= 85°C
= 0 V
http://onsemi.com
(Pb−Free)
(Pb−Free)
SOT−563
SOT−563
Package
20
0.8
4
T
J
= 25°C
5
4
3
2
1
0
0
Drain−to−Source Voltage vs. Total Charge
1.0
T
I
D
J
= 0.2 A
= 25°C
Figure 8. Gate−to−Source and
Qg, TOTAL GATE CHARGE (nC)
0.2
1.2
4000 / Tape & Reel
8000 / Tape & Reel
0.4
Shipping
0.6
0.8