NTZD5110NT1G ON Semiconductor, NTZD5110NT1G Datasheet
NTZD5110NT1G
Specifications of NTZD5110NT1G
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NTZD5110NT1G Summary of contents
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NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • Low R Improving System Efficiency DS(on) • Low Threshold Voltage • ESD Protected Gate • Small Footprint 1.6 x 1.6 mm • These are ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...
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9.0 V 8.0 V 1.2 7.0 V 6.0 V 0.8 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 125°C ...
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... Figure 7. Capacitance Variation 10 1 0.1 0.01 0.4 Figure 9. Diode Forward Voltage vs. Current ORDERING INFORMATION Device NTZD5110NT1G NTZD5110NT5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe- cifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS ...
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... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...