NTZD3155CT2G ON Semiconductor, NTZD3155CT2G Datasheet - Page 7

• Manufacturer Part Number: NTZD3155CT2G
• Description: MOSFET N/P-CH COMPL 20V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NTZD3155CT2G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 540mA, 430mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 150pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

250
200
150
100
100
50
10
0
1
0
1
Figure 9. Resistive Switching Time Variation
V
C
C
GS
ISS
OSS
t
t
d(ON)
d(OFF)
= 0 V
t
t
r
f
DRAIN-T O-SOURCE VOLTAGE (V)
P-CHANNEL TYPICAL PERFORMANCE CURVES
Figure 7. Capacitance Variation
5
R
C
vs. Gate Resistance
G
RSS
, GATE RESISTANCE (W)
10
10
V
I
V
D
15
DD
GS
= -0.215 A
T
= -10 V
= -4.5 V
J
= 25°C
http://onsemi.com
NTZD3155C
100
20
7
5
4
3
2
1
0
0
0.6
0.4
0.2
0
Q
0.3
GS
0.2
V
T
Drain-to-Source Voltage vs. Total Charge
Figure 10. Diode Forward Voltage vs. Current
-V
GS
J
= 25°C
0.4
(T
DS
= 0 V
-V
J
0.4
Q
Q
Figure 8. Gate-to-Source and
= 25°C unless otherwise noted)
SD
G
GD
, TOTAL GATE CHARGE (nC)
0.6
, SOURCE-TO-DRAIN VOLTAGE (V)
0.8
0.5
Q
T
1
0.6
1.2
1.4
0.7
I
T
D
J
1.6
= -0.215 A
= 25°C
-V
GS
1.8
0.8
2
10
9
8
7
6
5
4
3
2
1
0
0.9